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V:YAG

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V:YAG
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我司的V3+：YAG晶体，又称掺钒钇铝石榴石晶体，化学式为V3+:Y3Al5O12，是一种综合性比较优良的新型激光可饱和吸收体和无源Q开关晶体产品。在激光绘图仪、激光测距仪、激光切割机等领域有广泛的应用。在被动调Q固态激光器中，激光器具有稳定性好、寿命长、小型化、简单实用等优点。V元素有四个化学价：+2，+3，+4 和+5。具有+3 价的V3+离子是常用的Q开关和可饱和吸收离子，它们被掺杂到YAG基质晶体中以实现无源 Q 开关和激光锁模。V：YAG 晶体是激光可饱和吸收体和无源Q开关的新材料，波长范围为 1.06μm-1.44μm。特别适用于1.3μm的钕激光。它是 1300nm 波段的优良可饱和吸收材料。

特点

  • 使用寿命长
  • 激发态吸收
  • 3μm高饱和度
  • 高损伤阈值
  • 恢复时间短

属性

属性数值
化学式V3+:Y3Al5O12
晶体结构立方– la3d
取向<100> <+/-0.5°
透过率30%-97%
光密度0.1-0.8
原子跃迁结构两级系统
恢复时间5~22 ×10-22 s
浓度(0.05~0.35) wt%
基态吸收截面7.2 x 10-18 cm2
激发态吸收截面7.4 x 10-19 cm2
发射带宽1000-1450 nm
中心吸收波长1300 nm
涂层Standard coating is AR with R
< 0.2%(@1340 nm)
吸收系数1.0cm-1 – 7.0cm-1
损伤阈值>500MW/cm2

抛光

属性数值
方向公差< 0.5°
厚度/直径公差±0.05 mm
表面平整度<λ/8@632 nm
波前失真<λ/4@632 nm
表面质量5-Oct
平行30〞
垂直15ˊ
通光孔径>90%
倒角<0.2×45°
HR涂层<= 0.2% (@ 1340nm)

光谱

参考文献

[1]  Afternoon T . Cleo 2000 / tuesday afternoon.  2000.
[2]  Lagatsky A A ,  Abdolvand A ,  Kuleshov N V . Diode-pumped passively Q-switched Yb:KGW laser with V:YAG saturable absorber[J]. Filtration Industry Analyst, 2000.
[3]  Conroy R S ,  Malyarevich A M ,  Kemp A J , et al. V:YAG as passive Q-switch at 1342 nm and 1064 nm[C]// Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178). IEEE, 2002.
[4]  Xin L ,  Li G ,  Zhao S , et al. The influence of thermal lens effect on pulse repetition rate in diode-pumped passively Q-switched Nd:GdVO4/V:YAG laser[J]. Optics & Laser Technology, 2012, 44(4):929-934.
[5]  Song T ,  Li P ,  Chen X , et al. Passively Q-switched Nd:GYSGG laser operating at 1.3 μm with V:YAG as saturable absorber[J]. Optik – International Journal for Light and Electron Optics, 2016, 127(22):10621-10625.
[6]  Xue Q H ,  Quan Z ,  Bu Y K , et al. LD-pumped passively Q-switched Nd:YVO 4 /LBO red laser with V:YAG[J]. Optics & Laser Technology, 2006, 38(7):540-543.
[7]  Xin L ,  Li G ,  Zhao S , et al. Diode-pumped passively Q-switched Nd:Lu x Y 1 x VO 4 laser at 1.34 μm with two V:YAG saturable absorbers[J]. Optics Communications, 2011, 284(5):1307-1311.
[8]  Janousek J ,  Tidemand-Lichtenberg P ,  Mortensen J L , et al. Investigation of passively synchronized dual-wavelength Q-switched lasers based on V:YAG saturable absorber[J]. Optics Communications, 2006, 265(1):277-282.
[9]  Xu Q J . Characteristics and optical spectra of V:YAG crystal grown in reducing atmosphere[J]. Journal of Crystal Growth, 2006.
[10]  Xu J L ,  Huang H T ,  He J L , et al. The characteristics of passively Q-switched and mode-locked 1.06 μm Nd:GdVO 4 laser with V:YAG saturable absorber[J]. Optical Materials, 2010, 32(4):522-525.
[11]  Ma J ,  Li Y ,  Sun Y , et al. Diode-pumped passively Q-switched Nd:GdVO4 laser at 1342nm with V:YAG saturable absorber[J]. Optics Communications, 2009, 282(5):958-961.
[12]  Ma J ,  Li Y ,  Sun Y , et al. Passively Q-switched 1.32-μm Nd:YAG laser with a V:YAG saturable absorber[J]. Laser Physics, 2008, 18(4):393-395.
[13]  Podlipensky A V ,  Yumashev K V ,  Kuleshov N V , et al. Passive Q-switching of 1.44μm and 1.34μm diode-pumped Nd:YAG lasers with a V:YAG saturable absorber[J]. Applied Physics B, 2003, 76(3):245-247.
[14]  Malyarevich A M ,  Denisov I A ,  Yumashev K V , et al. V:YAG – a new passive Q-switch for diode-pumped solid-state lasers[J]. Applied Physics B, 1998, 67(5):555-558.
[15] T, OmatsuK, MiyamotoM,等. 1.3-μm passive Q-switching of a Nd-doped mixed vanadate bounce laser in combination with a V:YAG saturable absorber[J]. Applied physics, 2010.

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