Nd:YVO4

产品分类:8, 119

我司的Nd:YVO4晶体产品,又称掺钕钒酸钆晶体。是一种综合性能出色的制作半导体泵浦固体激光器的激光晶体产品。Nd:YVO4晶体广泛用于在机械、材料加工、波谱学、晶片检验、显示器、医学检测、激光印刷、数据存储等多个领域。该产品有热导性能好,受激发射截面大,激光损伤阈值高、吸收带宽,吸收峰约808nm等特点。由于这些优点,小晶体可以用来制造更小的激光器件。Nd:YVO4晶体的另一个特点是它是单轴的,这使得它发出线性偏振光。与倍频晶体相结合,可以实现绿、蓝、红三种波长的全固态激光器。现在Nd:YVO4激光器已在机械、材料加工、波谱学、晶片检验、显示器、医学检测、激光印刷、数据存储等多个领域得到广泛的应用。而且Nd:YVO4二极管泵浦固态激光器正在迅速取代传统的水冷离子激光器和灯泵浦激光器的市场,尤其是在小型化和单纵模输出方面。可以运用在激光二极管泵浦全固态(DPSS)微小型激光器,激光雷达,遥感卫星产品之中。

特点

  • 吸收系数高
  • 受激发射截面大
  • 吸收带宽
  • 损伤阈值高
  • 单轴晶体
  • 良好的物理和光学性能

Nd:YVO4

参数

材料规格

材料Nd: YVO4
浓度公差(atm%)0.5%, 1.1%, 2.0%, 3.0%
取向A-cut or C-cut
平行性20〞
垂直性5〞
表面质量符合MIL-O-13830 B10/5划痕/凹陷
波前畸变<λ/8 @633nm
表面平整度λ/10@ 633 nm
通光孔径>90%
倒角≤0.2mm@450
尺寸公差(W±0.1mm)x(H±0.1mm)x(L+0.2/-0.1mm) (L<2.5mm)
(W±0.1mm)x(H±0.1mm)x(L+0.5/-0.1mm) (L≥2.5mm)
角度公差≤0.5°
损伤阈值[GW / cm2]>1 for 1064nm, TEM00, 10ns, 10Hz (AR-涂层)
涂层HR@1064nm+532nm+HT@808nm/AR@1064nm+532nm

物理和化学特性

晶体结构锆石四方体,空间群D4h-I4 / amd
晶格常数a=b=7.12, c=6.29
密度4.22g/cm3
熔点1825
导热系数/(W·m-1·K-1 @ 25°C)5.2
热光学系数(dn / dT)dno/dT=8.5×10-6/K; dne/dT=2.9×10-6/K
热膨胀率/(10-6·K-1 @ 25°C)a = 4.43, c= 11.4
硬度(莫氏)4~5

光学和光谱性质

激光波长1064nm, 1342nm
偏振激光发射π偏振;平行于光轴(c轴)
泵浦波长808nm
本征损失0.02cm-1 @1064nm
二极管泵浦光到光效率>60%
发射截面25×10-19cm2@1064nm
荧光寿命90 μs (大约 50 μs for 2 atm% Nd 掺杂) @ 808 nm
增益带宽0.96nm @1064nm
折光率1.9573(no); 2.1652(ne) @1064nm
1.9721(no); 2.1858(ne) @808nm
2.0210(no); 2.2560(ne) @532nm
吸收系数31.4 cm-1 @ 808 nm
吸收长度0.32 mm @ 808 nm
增益带宽0.96 nm (257 GHz) @ 1064 nm

吸收和发射光谱

Nd-YVO4激光晶体-吸收谱1-南京光宝-CRYLINKNd-YVO4激光晶体-吸收谱2-南京光宝-CRYLINK
Nd-YVO4激光晶体-发射谱π-南京光宝-CRYLINKNd-YVO4激光晶体-发射谱σ-南京光宝-CRYLINK

参考文献

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[15]  Wang Z ,  Sun L ,  Zhang S , et al. Investigation of LD end-pumped Nd:YVO 4 crystals with various doping levels and lengths[J]. Optics & Laser Technology, 2001, 33(1):47-51.
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[23] Hur,  M. G , Yang, et al. Optical properties of EFG grown Nd:YVO4 single crystals dependent on Nd concentration.[J]. Journal of Crystal Growth, 2002.
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[25]  Helen Y ,  Dassow R ,  Nerding M , et al. High mobility thin film transistors by Nd:YVO4-laser crystallization[J]. Thin Solid Films, 2001, 383(1-2):143-146.
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