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Cr:ZnSe

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Cr:ZnSe

Cr:ZnSe激光晶体具有以下优点:通常没有激发态吸收和上位能转换,极宽的吸收带和大的发射截面,在室温下具有极好的荧光量子效率和超宽的发射宽度以及良好的化学和机械性能特性,使其成为高效,强大的可调谐中红外激光的极佳来源。Cr:ZnSe激光晶体由于中红外波段是大气的窗口,因此在光通信、污染气体检测、工业燃烧产物测试等领域具有重要的应用前景。

  • 广泛的可调性(从2.1-3.1μm发射)
  • 宽吸收带
  • 大增益截面(σ发射〜9 × 10-19 cm2
  • 激发态吸收的最小问题(不允许上能级激发态的自旋跃迁)
  • 高导热性比YAG好(ZnSe为18w/m·K,YAG为13w/m·K)
  • 高IR(0.6-20μm)透明度

材料规格

晶体结构立方
泊松比0.28
厚度/直径公差±0.05mm
方向公差< 0.5°
表面平整度<λ/8@632nm
波前失真<λ/4@632nm
表面质量10-5(MIL-O-13830A)
平行性30
垂直性15ˊ
通光孔径>90%
倒角<0.2×45°
熔点1520 ºC

物理和化学特性

热膨胀系数 @20ºC1.5×10-6/ºC
导热系数。 @20ºC14 W/m/ºK
比热0.79 J/g K
密度5.27 g/cm³
耐久努氏硬度112 kgf/mm²
莫氏硬度8.5
杨氏模量67 GPa
断裂模量55 MPa
取向<111>or <100>

光学和光谱性质

激光波长2150 – 2600 nm
发射线宽<1 nm
发射截面(@ 1064nm)9×10-19 cm²
本征损失@ 1064nm<0.003 cm-1
折射率(n)@ 1650nm2.455
热光学系数(dn / dT)@nm 61×10-6/ºC

吸收和发射光谱

Cr-ZnSe激光晶体-吸收谱Cr-ZnSe激光晶体-发射谱

参考文献

[1]  Dai T Y ,  Xu X G ,  Li X L , et al. 41kHz repetition rate passively Q-switched Ho:YAP laser with Cr:ZnS as a saturable absorber[J]. Optik – International Journal for Light and Electron Optics, 2016:4844-4847.
[2]  Dai Y ,  Li Y ,  Zou X , et al. Compact passively Q-switched Tm:YLF laser with a polycrystalline Cr:ZnS saturable absorber[J]. Optics & Laser Technology, 2014, 57:202-205.
[3]  Hoemmerich U ,  Jones I K ,  Nyein E E , et al. Comparison of the optical properties of diffusion-doped polycrystalline Cr:ZnSe and Cr:CdTe windows[J]. Journal of Crystal Growth, 2006, 287(2):450-453.
[4] Alphan, Sennaroglu, and, et al. Concentration dependence of fluorescence and lasing efficiency in Cr2+:ZnSe lasers[J]. Optical Materials, 2007.
[5]  Tablero C . Impurity–host interactions in Cr-substituted ZnSe[J]. Solid State Communications, 2007, 143(8-9):399-402.
[6]  Kim C ,  Martyshkin D V ,  Fedorov V V , et al. Middle-infrared random lasing of Cr 2+ doped ZnSe, ZnS, CdSe powders, powders imbedded in polymer liquid solutions, and polymer films[J]. Optics Communications, 2009, 282(10):2049-2052.
[7]  Fedorov V V ,  Konak T ,  Dashdorj J , et al. Optical and EPR spectroscopy of Zn:Cr:ZnSe and Zn:Fe:ZnSe crystals[J]. Optical Materials, 2014, 37:262-266.
[8]  Qamar F Z ,  King T A . Passive Q-switching of the Tm-silica fibre laser near 2 μm by a Cr 2+:ZnSe saturable absorber crystal[J]. Optics Communications, 2005, 248(4-6):501-508.
[9]  Wang X Y ,  Chen Z ,  Zhang L , et al. Preparation, spectroscopic characterization and energy transfer investigation of iron-chromium diffusion co-doped ZnSe for mid-IR laser applications[J]. Optical Materials, 2016, 54:234-237.
[10] A.V Podlipensky and V.G Shcherbitsky and N.V Kuleshov and V.P Mikhailov and V.I Levchenko and V.N Yakimovich and L.I Postnova and V.I Konstantinov. Pulsed laser operation of diffusion-doped Cr2+:ZnSe[J]. Optics Communications, 1999.
[11] Min, Chen, Hongmei, et al. Reparative effect of diffusion process on host defects in Cr2+ doped ZnS/ZnSe[J]. Journal of Alloys & Compounds, 2014.
[12] S Kück. Spectroscopy and laser characteristics of Cr 2+-doped chalcogenide crystals — overview and recent results[J]. Journal of Alloys & Compounds, 2002, 341(1-2):28-33.
[13]  Demirbas U ,  Sennaroglu A ,  Somer M . Synthesis and characterization of diffusion-doped Cr2+:ZnSe and Fe2+:ZnSe[J]. Optical Materials, 2006, 28(3):231-240.

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